| PART |
Description |
Maker |
| MTE2050-OH1 |
CAP 10PF 100V 5% NP0(C0G) RAD.10 .15X.15 BULK 红外线发射器
5MM WATER CLEAR IR EMITTER
Infrared Emitter
|
Marktech Corporate
Marktech Optoelectronics
|
| TD62551 TD62551S TD62553S E005673 TD62555S TD62554 |
4CH SINGLE DRIVER : COMMEN EMITTER
From old datasheet system
4CH SINGLE DRIVER : COMMON EMITTER
4CH SINGLE DIRVER : COMMON EMITTER 4路单DIRVER：共发射
|
TOSHIBA[Toshiba Semiconductor]
Toshiba, Corp.
|
| SLT1440-H885A SLT1440-H260A SLT1446-F850A SLT1446- |
FIBER OPTIC DFB LASER MODULE EMITTER, 1368-1372nm, THROUGH HOLE MOUNT
FIBER OPTIC DFB LASER MODULE EMITTER, 1408-1412nm, THROUGH HOLE MOUNT
FIBER OPTIC DFB LASER MODULE EMITTER, 1508-1512nm, THROUGH HOLE MOUNT
FIBER OPTIC DFB LASER MODULE EMITTER, 1607-1613nm, THROUGH HOLE MOUNT
FIBER OPTIC DFB LASER MODULE EMITTER, 1568-1572nm, THROUGH HOLE MOUNT
|
|
| LD271LH LD271 LD271H LD271L |
INFRARD EMITTER
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
|
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| 2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW.
|
USHA India LTD
|
| SLT4466-XP/RH2-H885A SLT4460-CP/RH2-H260A SLT4466- |
FIBER OPTIC LASER DIODE MODULE EMITTER, 1368-1372nm, 2500Mbps, PANEL MOUNT, THROUGH HOLE MOUNT ROHS COMPLIANT PACKAGE
FIBER OPTIC LASER DIODE MODULE EMITTER, 1408-1412nm, 2500Mbps, THROUGH HOLE MOUNT, SC/PC CONNECTOR ROHS COMPLIANT PACKAGE
FIBER OPTIC LASER DIODE MODULE EMITTER, 1367-1373nm, 2500Mbps, PANEL MOUNT, THROUGH HOLE MOUNT
FIBER OPTIC LASER DIODE MODULE EMITTER, 1348-1352nm, 2500Mbps, PANEL MOUNT, THROUGH HOLE MOUNT
FIBER OPTIC LASER DIODE MODULE EMITTER, 1528-1532nm, 2500Mbps, THROUGH HOLE MOUNT, SC/PC CONNECTOR
FIBER OPTIC LASER DIODE MODULE EMITTER, 1528-1532nm, 2500Mbps, PANEL MOUNT, THROUGH HOLE MOUNT
|
Japan Aviation Electronics Industry, Ltd.
Cooper Bussmann, Inc.
|
| MC68HCL05C8 MC68HSC05C8 68HC705C8 MC68HC05C8 MC68H |
TRANSISTOR,IGBT,N-CHAN,1.2kV V(BR)CES,25A I(C),TO-264AA
IGBT; Continuous Collector Current, Ic:60A; Collector Emitter Saturation Voltage, Vce(sat):24V; Power Dissipation, Pd:200W; Collector Emitter Voltage, Vceo:900V; Transistor Polarity:N Channel
PROGRAMMING REFRERENCE GUIDE 编程REFRERENCE指南
|
Motorola, Inc.
Motorola Inc
Motorola Mobility Holdings, Inc.
|
| Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器，红外Lumineszenzdiode GaAlA红外发射
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| TCZT8020 |
Matchable Pairs - Emitter and Detector
From old datasheet system
Matchable Pairs ? Emitter and Detector
|
Vishay Telefunken
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| TCZT8012 |
Matchable Pairs ? Emitter and Detector
From old datasheet system
Matchable Pairs - Emitter and Detector
|
Vishay Telefunken
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| STC06IE170HV |
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17?/a>
Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15 Ohm
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17з
|
http://
ST Microelectronics, Inc.
STMicroelectronics
|
| TLN20107 TLN201F TLN201 |
Infrared LED GaA?As Infrared Emitter
Infrared LED GaA??s Infrared Emitter
Infrared LED GaAГAs Infrared Emitter
|
Toshiba Semiconductor
|
